Manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARB 1.2KV 40A TO247-3
Detailed Description:
Diode Silicon Carbide Schottky 1200 V 40A Through Hole TO-247-3
Product Status::
3006 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | WeEn Semiconductors |
Series | - |
Package | Tube |
Product Status | Active |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) | 40A |
Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 20 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
Capacitance @ Vr, F | 810pF @ 1V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247-3 |
Operating Temperature - Junction | 175°C (Max) |
Base Product Number | WNSC4 |