Manufacturer:
GeneSiC Semiconductor
Description:
SIC MOSFET N-CH 3A TO263-7
Detailed Description:
N-Channel 1700 V 3A (Tc) 54W (Tc) Surface Mount TO-263-7
Product Status::
8038 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | GeneSiC Semiconductor |
Series | G2R™ |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
Vgs(th) (Max) @ Id | 4V @ 2mA |
Vgs (Max) | +20V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 139 pF @ 1000 V |
FET Feature | - |
Power Dissipation (Max) | 54W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263-7 |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Base Product Number | G2R1000 |