Manufacturer:
GeneSiC Semiconductor
Description:
SIC MOSFET N-CH 41A TO247-3
Detailed Description:
N-Channel 1200 V 41A (Tc) 207W (Tc) Through Hole TO-247-3
Product Status::
8040 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | GeneSiC Semiconductor |
Series | G3R™ |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
Vgs(th) (Max) @ Id | 2.69V @ 7.5mA |
Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 15 V |
Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 800 V |
FET Feature | - |
Power Dissipation (Max) | 207W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Base Product Number | G3R75 |