Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 61V~100V TO220AB T
Detailed Description:
N-Channel 80 V 111A (Tc) 2.4W (Ta), 167W (Tc) Through Hole TO-220-3
Product Status::
4750 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Diodes Incorporated |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 111A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 40 V |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta), 167W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Base Product Number | DMT8008 |