Manufacturer:
Toshiba Semiconductor and Storage
Description:
G3 1200V SIC-MOSFET TO-247 140M
Detailed Description:
N-Channel 1200 V 20A (Tc) 107W (Tc) Through Hole TO-247
Product Status::
3414 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drain to Source Voltage (Vdss) | 1200 V |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds | 691 pF @ 800 V |
Mfr | Toshiba Semiconductor and Storage |
Mounting Type | Through Hole |
Operating Temperature | 175°C |
Package | Tube |
Package / Case | TO-247-3 |
Power Dissipation (Max) | 107W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 182mOhm @ 10A, 18V |
Series | - |
Supplier Device Package | TO-247 |
Technology | SiC (Silicon Carbide Junction Transistor) |
Vgs (Max) | +25V, -10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
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