Manufacturer:
Microchip Technology
Description:
MOSFET SIC 1200 V 40 MOHM TO-268
Detailed Description:
N-Channel 1200 V 64A (Tc) 303W (Tc) Surface Mount TO-268
Product Status::
4381 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
Drain to Source Voltage (Vdss) | 1200 V |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 1000 V |
Mfr | Microchip Technology |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Power Dissipation (Max) | 303W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
Series | - |
Supplier Device Package | TO-268 |
Technology | SiC (Silicon Carbide Junction Transistor) |
Vgs (Max) | +23V, -10V |
Vgs(th) (Max) @ Id | 2.6V @ 2mA |