Manufacturer:
Microsemi Corporation
Description:
NPN SILICON TRANSISTOR
Detailed Description:
Bipolar (BJT) Transistor NPN 600 V 200 mA 1 W Through Hole TO-5AA
Product Status::
9792 In Stock
Data Sheet:
PCB Symbol, Footprint
& 3D Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Microsemi Corporation |
Series | - |
Package | Bulk |
Product Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 200 mA |
Voltage - Collector Emitter Breakdown (Max) | 600 V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 5mA, 25mA |
Current - Collector Cutoff (Max) | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA, 10V |
Power - Max | 1 W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5AA |